Monte Carlo Study of Electron Transport in Inversion Layer of 6H-SiC MOS Structure

Monte Carlo Study of Electron Transport in Inversion Layer of 6H-SiC MOS Structure

SHANG Ye-chun;ZHANG Yi-men;ZHANG Yu-ming

ACTA ELECTRONICA SINICA ›› 2001, Vol. 29 ›› Issue (2) : 157-159.

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PDF(220 KB)

ACTA ELECTRONICA SINICA ›› 2001, Vol. 29 ›› Issue (2) : 157-159.

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Monte Carlo Study of Electron Transport in Inversion Layer of 6H-SiC MOS Structure

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2001, 29(2): 157-159.

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