Development of High Voltage Thin Film SOI Device with Linearly Doped Drift Region

Development of High Voltage Thin Film SOI Device with Linearly Doped Drift Region

ZHANG Sheng-dong;HAN Ru-qi;Tommy Lai;Johnny Sin

ACTA ELECTRONICA SINICA ›› 2001, Vol. 29 ›› Issue (2) : 164-167.

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PDF(243 KB)

ACTA ELECTRONICA SINICA ›› 2001, Vol. 29 ›› Issue (2) : 164-167.

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Development of High Voltage Thin Film SOI Device with Linearly Doped Drift Region

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2001, 29(2): 164-167.

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