The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

YANG Sheng-qi;HE Jin;HUANG Ru;ZHANG Xing

ACTA ELECTRONICA SINICA ›› 2002, Vol. 30 ›› Issue (11) : 1605-1608.

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ACTA ELECTRONICA SINICA ›› 2002, Vol. 30 ›› Issue (11) : 1605-1608.
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The Simulation Analysis of Thick Film Fully Depleted SOI MOSFET Implemented by Anti-Doped Silicon Island

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2002, 30(11): 1605-1608.

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