An Analytical Large-Signal Capacitance Model for SiC MESFET

YANG Lin-an;YU Chun-li;ZHANG Yi-men;ZHANG Yu-ming

ACTA ELECTRONICA SINICA ›› 2002, Vol. 30 ›› Issue (2) : 229-231.

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ACTA ELECTRONICA SINICA ›› 2002, Vol. 30 ›› Issue (2) : 229-231.
论文

An Analytical Large-Signal Capacitance Model for SiC MESFET

  • YANG Lin-an, YU Chun-li, ZHANG Yi-men, ZHANG Yu-ming
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Abstract

According to the properties of impurities with incomplete ionization and high saturated electron drift velocity in silicon carbide,a quasi analytical large-signal capacitance model of 4H-SiC MESFET for RF power applications is proposed utilizing the charge controlling theory and carrier velocity saturation theory,combined with description of hyperbolic tangent function.The comparison between simulations and measurements shows a good agreement.The model is simple in calculations and distinct in physical mechanism,therefore suitable for design of microwave devices and circuits.

Key words

SiC / RF / MESFET / capacitance model

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YANG Lin-an;YU Chun-li;ZHANG Yi-men;ZHANG Yu-ming. An Analytical Large-Signal Capacitance Model for SiC MESFET[J]. Acta Electronica Sinica, 2002, 30(2): 229-231.
PDF(227 KB)

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