Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated-Diode Technique
HE Jin;ZHANG Xing;HUANG Ru;WANG Yang-yuan
Acta Electronica Sinica ›› 2002, Vol. 30 ›› Issue (2) : 252-254.
Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated-Diode Technique
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