Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance
HE Jin;ZHANG Xing;HUANG Ru;LING Xiao-yun;HE Zhe-hong
Acta Electronica Sinica ›› 2002, Vol. 30 ›› Issue (2) : 298-300.
Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance
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