A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region

XU Jian-sheng;ZHOU Qiu-zhan;ZHANG Xin-fa

ACTA ELECTRONICA SINICA ›› 2002, Vol. 30 ›› Issue (8) : 1192-1195.

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ACTA ELECTRONICA SINICA ›› 2002, Vol. 30 ›› Issue (8) : 1192-1195.
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A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2002, 30(8): 1192-1195.

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