A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate 60Co Gamma Rays

HE Bao-ping;WANG Gui-zhen;ZHOU Hui;LUO Yin-hong;JIANG Jing-he

Acta Electronica Sinica ›› 2002, Vol. 30 ›› Issue (8) : 1229-1231.

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Acta Electronica Sinica ›› 2002, Vol. 30 ›› Issue (8) : 1229-1231.
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A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate 60Co Gamma Rays

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2002, 30(8): 1229-1231

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