Threshold Voltage Model of a Novel Dual Polysilicon Material Gate LDMOS Based on Two Dimensional Potential Distribution

DAI Yue-hua, GAO Shan, KE Dao-ming, CHEN Jun-ning

ACTA ELECTRONICA SINICA ›› 2007, Vol. 35 ›› Issue (5) : 844-848.

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ACTA ELECTRONICA SINICA ›› 2007, Vol. 35 ›› Issue (5) : 844-848.

Threshold Voltage Model of a Novel Dual Polysilicon Material Gate LDMOS Based on Two Dimensional Potential Distribution

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2007, 35(5): 844-848.

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