Research on SiGeC Power Diodes with Ultra-Low Leakage Current and Ultra-Fast Recovery Characteristics

Research on SiGeC Power Diodes with Ultra-Low Leakage Current and Ultra-Fast Recovery Characteristics

LIU Jing;GAO Yong

Acta Electronica Sinica ›› 2009, Vol. 37 ›› Issue (11) : 2525-2529.

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PDF(495 KB)

Acta Electronica Sinica ›› 2009, Vol. 37 ›› Issue (11) : 2525-2529.

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Research on SiGeC Power Diodes with Ultra-Low Leakage Current and Ultra-Fast Recovery Characteristics

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{{article.zuoZheEn_L}}. {{article.title_en}}[J]. {{journal.qiKanMingCheng_EN}}, 2009, 37(11): 2525-2529

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