A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator

LI Yan-ming;LAI Xin-quan;JIA Xin-zhang;CAO Yu;YE Qiang

ACTA ELECTRONICA SINICA ›› 2009, Vol. 37 ›› Issue (5) : 1130-1135.

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ACTA ELECTRONICA SINICA ›› 2009, Vol. 37 ›› Issue (5) : 1130-1135.
论文

A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator

  • LI Yan-ming1,2, LAI Xin-quan1, JIA Xin-zhang2, CAO Yu1, YE Qiang1
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Abstract

A low-dropout regulator (LDO) with fast-transient response speed is presented by utilizing the proposed transient response enhancement (TRE) circuit,which doesn't bring the quiescent current increase.The proposed LDO has been fabricated in a 0.5 μm standard CMOS process,and the die area is 0.49mm2.The proposed LDO dissipates 23 μA quiescent current at no-load condition and is able to deliver up to 200mA load current.With a 1 μF output capacitor,the maximum transient output-voltage variation is within 3.5% of the output voltage with load step changes of 200mA/100ns.

Key words

linear regulator / low-dropout regulator (LDO) / fast-transient response / power management ICs

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LI Yan-ming;LAI Xin-quan;JIA Xin-zhang;CAO Yu;YE Qiang. A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator[J]. Acta Electronica Sinica, 2009, 37(5): 1130-1135.
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