The Study on NBTI Mechanism and Its Effect on P<sup>+</sup> Gate PMOSFET

HAO Yue; HAN Xiao-liang; LIU Hong-xia

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The Study on NBTI Mechanism and Its Effect on P⁺ Gate PMOSFET

更新时间：2025-07-16

- The Study on NBTI Mechanism and Its Effect on P⁺ Gate PMOSFET
- Acta Electronica Sinica Vol. 31, Issue S1, Pages: 2063-2065(2003)
- 作者机构：
  
  西安电子科技大学微电子研究所,陕西,西安,710071
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN306TN386.1
- Published Online：25 December 2003，
  
  Published：2003
- 稿件说明：
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HAO Yue, HAN Xiao-liang, LIU Hong-xia. The Study on NBTI Mechanism and Its Effect on P⁺ Gate PMOSFET[J]. Acta Electronica Sinica, 2003, 31(S1): 2063-2065.
DOI：

HAO Yue, HAN Xiao-liang, LIU Hong-xia. The Study on NBTI Mechanism and Its Effect on P⁺ Gate PMOSFET[J]. Acta Electronica Sinica, 2003, 31(S1): 2063-2065. DOI：

摘要

本文深入研究了P

栅PMOSFET中的NBTI效应

首先通过实验分析了NBTI应力后器件特性及典型参数的退化

基于这些实验结果提出了一种可能的NBTI效应发生机制:即由水分子参与的Si-SiO

界面处的电化学反应.最后从工艺的角度给出了减小和抑制NBTI效应的方法.

Abstract

The influence of negative bias temperature instability (NBTI) on P

polygate PMOSFET's was analyzed.The pre and post-stress degradation of device characteristics and key parameter was obtained from the NBTI stress experiments.Based on this experimental result

the electrochemical reaction which water act as a reactant is the main cause of NBTI mechanism.Lastly

some methods was brought up to suppress NBTI effects.

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The Study on NBTI Mechanism and Its Effect on P+ Gate PMOSFET

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The Study on NBTI Mechanism and Its Effect on P⁺ Gate PMOSFET