Study on Characteristics of 4H-SiC npn BJT

GONG Xin; ZHANG Jin-cheng; HAO Yue; ZHANG Xiao-ju

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Study on Characteristics of 4H-SiC npn BJT

更新时间：2025-07-16

- Study on Characteristics of 4H-SiC npn BJT
- Acta Electronica Sinica Vol. 31, Issue S1, Pages: 2201-2204(2003)
- 作者机构：
  
  西安电子科技大学微电子所,陕西,西安,710071
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.2
- Published Online：25 December 2003，
  
  Published：2003
- 稿件说明：
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GONG Xin, ZHANG Jin-cheng, HAO Yue, et al. Study on Characteristics of 4H-SiC npn BJT[J]. Acta Electronica Sinica, 2003, 31(S1): 2201-2204.
DOI：

GONG Xin, ZHANG Jin-cheng, HAO Yue, et al. Study on Characteristics of 4H-SiC npn BJT[J]. Acta Electronica Sinica, 2003, 31(S1): 2201-2204. DOI：

摘要

基于二维器件仿真软件Medici对4H-SiC双极型晶体管(BJT)进行了建模

包括能带模型、能带窄变模型、迁移率模型、产生复合模型和不完全电离模型

为4H-SiC的工艺与器件提供了设计平台.在此基础上对4H-SiC BJT器件进行了模拟研究.结果显示

器件基极电流

=1A/m时发射极电流增益为32.4

击穿电压

CEO

大于800V

截止频率

接近1GHZ.

Abstract

A model of 4H-SiC bipolar junction transistor (BJT) based on two- dimensional device simulator M edici is presented.The model

in which bandgap model

mobility model

generation and recombination model and incomplete ionization model are included

provides a design platform for 4H-SiC technologies and devices.The simulation results show that the common-emitter current gain is 32.4 while the base current

equals to 1A/m with the breakdown voltage

CEO

more than 800V and the cut-off frequency

close to 1GHz.

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Related Institution

School of Microelectronics, Xidian University

Dept.of Information and control,Xi'an Institute of Posts and Telecommunications

The 13th Research Institute,CETC

School of MicroelectronicsXidian UniversityXi'anShaanxi 710071China

Dept.of Information and controlXi'an Institute of Posts and TelecommunicationsXi'anShaanxi 710061China

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