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Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs
更新时间：2025-07-02

    • Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs

    • Acta Electronica Sinica   Vol. 28, Issue 2, Pages: 49-51(2000)

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  • Study on Nitridation-Induced Residual Stress near Si/SiO2 Interface in n-MOSFETs[J]. Acta Electronica Sinica, 2000, 28(2): 49-51. DOI：

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