This paper discussed the technique of self-adjustment for focusing field emission arrays (FFEA).This method made etch gate and focus electrode in FEA very precise for fabrication of Spindt type FFEA.The difference between traditional way and self-adjustment way is pointed in the paper.For ensuring that the hole of focus electrode is precisely made

we developed transparent resistor layer with Ni-SiO2.A typical device has been developed

with focus electrode made by the technique of self-adjustment.