Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature

XU Chen; SHEN Guang-di; ZOU De-shu; CHEN Jian-xin; DENG Jun; WEI Huan; DU Jin-yu; GAO Guo

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Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature

更新时间：2025-07-16

- Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature
- Acta Electronica Sinica Vol. 29, Issue 2, Pages: 285-286(2001)
- 作者机构：
  
  北京工业大学电子工程系和北京市光电子技术实验室,北京,100022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：2001
- 稿件说明：
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XU Chen, SHEN Guang-di, ZOU De-shu, et al. Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature[J]. Acta Electronica Sinica, 2001, 29(2): 285-286.
DOI：

XU Chen, SHEN Guang-di, ZOU De-shu, et al. Fabrication and Characterization of SiGe/Si HBT Operating at Low Temperature[J]. Acta Electronica Sinica, 2001, 29(2): 285-286. DOI：

摘要

用MBE(分子束外延

Molecular Beam Epitaxy)生长的材料研制了在低温工作的SiGe/Si HBT(异质结双极型晶体管

Heterojunction Bipolar Transistor).其在液氮下的直流增益h

)为16000

交流增益β(ΔI

/ΔI

)为26000

分别比室温增益提高51和73倍.测试了该HBT直流特性从室温到液氮范围内随温度的变化

并作了分析讨论.解释了极低温度时性能随温度变化与理论值的差异.

Abstract

The SiGe/Si HBTs operating at low temperature were fabricated.The current gain h

)over 16000 and β(ΔI

/ΔI

)over 26000 have been observed at 77K

exceeding those at 290K by about 51 and 73 times

respectively.The temperature dependence of DC characteristics of the HBT between 290K and 77K was described and analyzed.The departure from theoretical expectation of this dependence at very low temperature was discussed.

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