A new SOI Sense-Amplifier

LIU Xin-yu; SUN Hai-feng; HAI Chao-he; HE Zhi-jing; WU De-xin

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A new SOI Sense-Amplifier

更新时间：2025-07-16

- A new SOI Sense-Amplifier
- Acta Electronica Sinica Vol. 29, Issue 6, Pages: 857-859(2001)
- 作者机构：
  
  1. 中国科学院微电子中心,北京,100029
  2. 中国科学院半导体所,北京,100083
  3. 中国科学院微电子中心北京,100029
  4. 中国科学院半导体所北京,100083
- 作者简介：
- 基金信息：
- DOI：
  CLC： TP342+1.
- Published：2001
- 稿件说明：
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LIU Xin-yu, SUN Hai-feng, HAI Chao-he, et al. A new SOI Sense-Amplifier[J]. Acta Electronica Sinica, 2001, 29(6): 857-859.
DOI：

LIU Xin-yu, SUN Hai-feng, HAI Chao-he, et al. A new SOI Sense-Amplifier[J]. Acta Electronica Sinica, 2001, 29(6): 857-859. DOI：

摘要

本文利用"灵巧的体接触(Smart-Body-Contact)"技术设计出一种新型的SOI灵敏放大器.采用Hspice软件对体硅的和新型的交叉耦合灵敏放大器进行模拟和比较

发现新型的交叉耦合灵敏放大器比体硅的交叉耦合灵敏放大器延迟时间缩短30%

最小电压分辨可达0.05V.最后

我们成功地将该电路应用于CMOS/SOI 64Kb SRAM电路

电路存取时间仅40ns.

Abstract

The paper proposes a new SOI sense-amplifier adopting smart-body-contact technology.Delay time characteristics of the SOI Cross-coupling sense-amplifier were analyzed by Hspice simulation and compared with conventional silicon Cross-coupling sense-amplifier

Delay time reduction of the SOI Cross-coupling sense-amplifier over conventional Cross-coupling silicon sense-amplifier is about 30%

and voltage differential is 0.05V.Finally

the circuit was adopted successfully in CMOS/SOI 64Kb SRAM with 40ns fast access time.

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