A transport model for conductivity modulation power devices with localized lifetime control by low energy He ion implantation is developed in this paper.The distribution of carriers and the forward drop of a conductivity modulation power device with localized lifetime control is obtained

based on the solution of 3-region ambipolar transport equations.The reverse recovery time is also obtained by using charge-controlled method.The results of the theoretical analysis and the experiments demonstrate that the reverse recovery time of power devices decreases to below 1/2

and forward drop only increases by a factor of 0.1 times.