Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors

ZHANG Wan-rong; LI Zhi-guo; WANG Li-xin; WANG Dong; Cui Fu-xian; SUN Ying-hua; CHENG Yao-hai; CHEN Jian-xin; SHEN Guang-di; LUO Jin-sheng

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Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors

更新时间：2025-07-16

- Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors
- Acta Electronica Sinica Vol. 29, Issue 8, Pages: 1132-1134(2001)
- 作者机构：
  
  1. 北京工业大学电子系,北京,100022
  2. 信息产业部电子第13研究所,河北,石家庄,050051
  3. 西安交通大学微电子研究所,陕西,西安,710049
  4. 北京工业大学电子系北京,100022
  5. 信息产业部电子第13研究所河北石家庄,050051
  6. 西安交通大学微电子研究所陕西西安,710049
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：2001
- 稿件说明：
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ZHANG Wan-rong, LI Zhi-guo, WANG Li-xin, et al. Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors[J]. Acta Electronica Sinica, 2001, 29(8): 1132-1134.
DOI：

ZHANG Wan-rong, LI Zhi-guo, WANG Li-xin, et al. Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors[J]. Acta Electronica Sinica, 2001, 29(8): 1132-1134. DOI：

摘要

同质结硅双极晶体管在共射极状态下工作中

在高集电极——发射极电压、大电流下

由于热电正反馈

容易发生热击穿

这限制了晶体管的安全工作区域。本文报道了在大电流下

由于热电负反馈

重掺杂基区Si/SiGe/HBT出现了负阻特性

并对这一现象进行了新的解释

认为这是由于大电流下耗散功率增加

基区俄歇复合导致电流增益随温度增加而减小的结果.这一现象有利于改善大电流下双极晶体管的抗烧毁能力

证明Si/SiGe/HBT适于大功率应用.

Abstract

For homo-junction Si bipolar transistor operation under common emitter

because of the positive feedback of thermoelectricity

thermal breakdown occurs easily at high collector——emitter voltage and high current

this decreases the safe operation area of transistors.In this paper

due to negative feedback of thermoelectricity

negative resistance characteristics of Si/SiGe/Si double hetero-junction bipolar transistors with heavily doped base at high currents is reported.A new interpretation to this phenomenon is given.This is resulted from Auger recombination in the base and decrease in current gain at high current as temperature increases.This phenomenon has benefit to improve anti-burnout capability of bipolar transitors.The results suggest that Si/SiGe/HBT is suitable for high power applications.

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