Discussion on the Physical Model in Photoelectric Dual Base Transistor

ZHENG Yun-guang; ZHANG Shi-lin; GUO Wei-lian; LI Shu-rong; SHA Ya-nan; MAO Lu-hong

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Discussion on the Physical Model in Photoelectric Dual Base Transistor

更新时间：2025-07-16

- Discussion on the Physical Model in Photoelectric Dual Base Transistor
- Acta Electronica Sinica Vol. 29, Issue 8, Pages: 1123-1125(2001)
- 作者机构：
  
  天津大学电子信息工程学院,天津,300072
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN364
- Published：2001
- 稿件说明：
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ZHENG Yun-guang, ZHANG Shi-lin, GUO Wei-lian, et al. Discussion on the Physical Model in Photoelectric Dual Base Transistor[J]. Acta Electronica Sinica, 2001, 29(8): 1123-1125.
DOI：

ZHENG Yun-guang, ZHANG Shi-lin, GUO Wei-lian, et al. Discussion on the Physical Model in Photoelectric Dual Base Transistor[J]. Acta Electronica Sinica, 2001, 29(8): 1123-1125. DOI：

摘要

本文通过分析器件内部电流传输探讨了光电双基区晶体管(PDUBAT)负阻特性产生机理

首次提出了PDUBAT负阻形成的原因是其输出管横向输出电流的反馈作用

这一看法得到了实验验证.

Abstract

Through analyzing the internal current transport in photoelectric dual-base transistor(PDUBAT)

the physical mechanism for the origin of the negative resistance characteristic in the device has been discussed.In this paper

we propose that the cause for the negative resistance in PDUBAT is coming from the feedback effect of the lateral component of output current of the vertical transistor in PDUBAT for the first time. This viewpoint has been confirmed by experiment.

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