Realization of a Low-Side Device with High Speed and Low Power Dissipation in Half-Bridge Power Output Section

YANG Hong-qiang; CHEN Xing-bi

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Realization of a Low-Side Device with High Speed and Low Power Dissipation in Half-Bridge Power Output Section

更新时间：2025-07-16

- Realization of a Low-Side Device with High Speed and Low Power Dissipation in Half-Bridge Power Output Section
- Acta Electronica Sinica Vol. 29, Issue 6, Pages: 814-815(2001)
- 作者机构：
  
  电子科技大学微电子所,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322+.7
- Published：2001
- 稿件说明：
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YANG Hong-qiang, CHEN Xing-bi. Realization of a Low-Side Device with High Speed and Low Power Dissipation in Half-Bridge Power Output Section[J]. Acta Electronica Sinica, 2001, 29(6): 814-815.
DOI：

YANG Hong-qiang, CHEN Xing-bi. Realization of a Low-Side Device with High Speed and Low Power Dissipation in Half-Bridge Power Output Section[J]. Acta Electronica Sinica, 2001, 29(6): 814-815. DOI：

摘要

本文提出了一种动态地控制IGBT阳极短路的结构

并把这种结构用于具有高低侧驱动和半桥式功率输出级的功率集成电路低侧管中.这种结构使得功率输出级低侧管导通时工作于IGBT模式

关断过程中工作于MOS模式

因而具有导通压降小、关断速度快的优点

有效地解决了功率管导通电阻和关断速度之间的矛盾.在不改变工艺

不降低耐压

不增加电路元件的前提下

实现了低侧管的高速低功耗.

Abstract

A structure with dynamically controlled anode-short is brought forward

and can be used in the low-side device of power IC with high-side and low-side drive and half-bridge output section.By using this structure the low-side device can operate in IGBT mode while on and in MOS mode while turning off.This makes it a low forward voltage drop and high switch speed

and resolves the contradiction between on-resistance and turning off time effectively.Then a low-side device with high speed and low power dissipation is realized without depressing breakdown voltage

changing process and additional circuit devices.

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