An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design

REN Tian-ling; ZHANG Wu-quan; LI Chun-xiao; CHEN Hong-yi; ZHU Jun; LIU Li-tian

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An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design

更新时间：2025-07-16

- An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design
- Acta Electronica Sinica Vol. 29, Issue 8, Pages: 1135-1137(2001)
- 作者机构：
  
  清华大学微电子所,北京,100084
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN384TN402
- Published：2001
- 稿件说明：
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REN Tian-ling, ZHANG Wu-quan, LI Chun-xiao, et al. An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design[J]. Acta Electronica Sinica, 2001, 29(8): 1135-1137.
DOI：

REN Tian-ling, ZHANG Wu-quan, LI Chun-xiao, et al. An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design[J]. Acta Electronica Sinica, 2001, 29(8): 1135-1137. DOI：

摘要

从描述铁电电容的

P-V

滞回特性出发

本文在ZSTT宏模型的基础上提出了一个改进的铁电电容宏模型

并成功利用此模型对铁电存储器(FeRAM)进行了电路优化和电路模拟.最后将试图对此模型做进一步的推广

以模拟铁电存储器在另一种新读写过程中的操作.

Abstract

An improved macro model is proposed based on ZSTT model

which is derived from the hysteresis loop of a ferroelectric capacitor.This model is proved to be very successful in the optimization and simulation for FeRAM design.It can also be adapted to express the P-V characteristic of a ferroelectric capacitor imposed by nonsymmetrical voltage

which is useful in some new operation scheme.

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