This Paper reports the effects of 1 MeV-Electron irradiation on intrinsic a-Si∶H films and pin diodes at various fluences of 1.4×10

15

4.2×10

15

8.4×10

15

cm

2

.The changes in the dark-photo conductivities and Photoluminescence(PL)of a-Si∶H films with the fluences of electron irradiation were measured.The changes in the illuminated J-V characteristics and the optical spectral response of a-Si∶H pin diodes with the fluences of electron irradiation were also measured.The electron irradiation could induce significant damage in the films and diodes

and redshifts of the peak value of the optical spectral response in the diodes

but there was no saturation phenomenon observed.The annealling behaviours of the irradiation induced-defects were also investigated.It was found that the electron irradiation

induced effects could not be completely recovered by high temperature annealling

although a part of the irradiation damage was recovered at room temperature.We discussed these experimental results and gave a reasonble explaination for them.