Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI

WEN Rui-mei; CHEN Shen-li

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Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI

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- Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI
- Acta Electronica Sinica Vol. 29, Issue 8, Pages: 1009-1012(2001)
- 作者机构：
  
  同济大学电子信息学院,上海,200092
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN405
- Published：2001
- 稿件说明：
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WEN Rui-mei, CHEN Shen-li. Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI[J]. Acta Electronica Sinica, 2001, 29(8): 1009-1012.
DOI：

WEN Rui-mei, CHEN Shen-li. Study on Controlling the Concentrations of Dissolved Oxygen and Total Organic Carbon in Water Used for ULSI[J]. Acta Electronica Sinica, 2001, 29(8): 1009-1012. DOI：

摘要

本文介绍了溶解氧(DO)以及总有机碳(TOC)对超大规模集成电路(ULSI)用水的污染

并列出了高纯水中TOC的浓度与栅氧化缺陷密度的关系数据.研究了影响水中DO的因素以及用各种方法降低TOC的比较

本文设计了用脱氧膜接触器

降低高纯水中的溶解氧.结合用双级反渗透(RO)及电脱盐(EDI)

再加上185nm紫外光照射高纯水

使高纯水中的溶解氧和TOC分别降至0.6μg/L和0.7μg/L

并用键能理论解释了185nm紫外降低TOC的机理.

Abstract

In this paper the contamination of water for ULSI by dissolved oxygen(DO) and total organic carbon (TOC) and the dependence of the density of defects in the gate oxide on the concentration of TOC in high purity water are described.The factors influencing the DO incorporation in water are studied and the different methods for abating TOC are compared.A membrane contactor used to remove DO has been designed.Concentration of DO and TOC in high-purity water treated by deoxy-membrane contactor in conjunction with the double reverse osmosis (RO)

electrodeionization desalting and radiation by 185nm UV can reach 0.6μg/L and 0.7μg/L

respectively

The mechanism of decreasing TOC by 185nmUV jrradiation has been explained by using bond energy theory.

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An Energy Transfer Photochemical Model for the Abatement of Total Organic Carbon in High Purity Water Used in ULSI Fabrication

Related Author

WEN Rui-Mei

LIANG Jun-Wu

Related Institution

Tongji University

Institute of Semiconductors

Tongji UniversityShanghai 200092China

Institute of SemiconductorsBeijing 100083China

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