Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO<sub>2</sub>

LIU Hong-xia; HAO Yue; HUANG Tao; FANG Jian-ping

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Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO₂

更新时间：2025-07-16

- Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO₂
- Acta Electronica Sinica Vol. 29, Issue 11, Pages: 1468-1470(2001)
- 作者机构：
  
  西安电子科技大学微电子研究所,陕西,西安,710071
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：2001
- 稿件说明：
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LIU Hong-xia, HAO Yue, HUANG Tao, et al. Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO₂[J]. Acta Electronica Sinica, 2001, 29(11): 1468-1470.
DOI：

LIU Hong-xia, HAO Yue, HUANG Tao, et al. Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO₂[J]. Acta Electronica Sinica, 2001, 29(11): 1468-1470. DOI：

摘要

本文通过衬底热电子SHE(Substrate hot electron)注入技术

对SHE增强的薄SiO

层击穿特性进行了研究.实验发现氧化层中的平均电子能量与衬底电压有很大的关系.通过能量守恒方程计算注入到氧化层中的平均电子能量

根据计算出的电子能量可以解释SHE注入和F-N隧穿注入的根本不同.本文提出了衬底热电子增强的TDDB(Time dependent dielectric breakdown)模型.

Abstract

SHE (Substrate hot electron) enhanced breakdown characteristics of thin SiO

are investigated by using SHE injection techniques.These experiments reveal that the average electron energy in the oxide depends on substrate voltage strongly.The average electron energy injected into oxide can be calculated by using the energy-conservation equation.The difference between SHE injection and F-N tunneling can be explained in terms of the caculated electron energy.A SHE enhanced TDDB model is presented in this paper.

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Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO2

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Study of Substrate Hot Electron Enhanced Breakdown Characteristics of Thin SiO₂