According to the properties of impurities with incomplete ionization and high saturated electron drift velocity in silicon carbide

a quasi analytical large-signal capacitance model of 4H-SiC MESFET for RF power applications is proposed utilizing the charge controlling theory and carrier velocity saturation theory

combined with description of hyperbolic tangent function.The comparison between simulations and measurements shows a good agreement.The model is simple in calculations and distinct in physical mechanism

therefore suitable for design of microwave devices and circuits.