Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance

HE Jin; ZHANG Xing; HUANG Ru; LING Xiao-yun; HE Zhe-hong

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Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance

更新时间：2025-07-16

- Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance
- Acta Electronica Sinica Vol. 30, Issue 2, Pages: 298-300(2002)
- 作者机构：
  
  1. 北京大学微电子学研究所,北京,100871
  2. 绵阳应用电子技术研究所,四川,绵阳,646300
  3. 北京大学微电子学研究所北京,100871
  4. 绵阳应用电子技术研究所四川绵阳,646300
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN331
- Published：2002
- 稿件说明：
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HE Jin, ZHANG Xing, HUANG Ru, et al. Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance[J]. Acta Electronica Sinica, 2002, 30(2): 298-300.
DOI：

HE Jin, ZHANG Xing, HUANG Ru, et al. Linearly-Graded Drift Region-Doped (LGDRD) RESURF LDMOS with an Improved Trade-off between the Breakdown Voltage and On-Resistance[J]. Acta Electronica Sinica, 2002, 30(2): 298-300. DOI：

摘要

本文提出了改进击穿电压和导通电阻折中性能的线性变化掺杂漂移区RESURF LDMOS晶体管新结构.用二维器件软件MEDICI对具有线性变化掺杂漂移区的RESURF LDMOS晶体管的性能进行了数值分析并由实验对其结果进行了验证.结果表明:在相同的漂移区长度下

该新结构较之于优化的常规RESURF LDMOS晶体管

它的击穿电压可由178V提高到234V

增加了1.5倍

而比导通电阻却从7.7mΩ·cm

下降到5mΩ·cm

减小了30%

显示了很好的击穿电压和导通电阻折中性能.实验结果也证实了数值分析的预言.

Abstract

A linearly-graded drift region-doped LDMOS transistor is evaluated in this paper.The characteristics of the LDMOS with a linearly-graded drift region-doped profile have been demonstrated by the 2D semiconductor simulator MEDICI and verified by our experimental results.It has been shown that the reduction of the on-resistance by 30% from 7.7mΩ·cm

to 5 mΩ·cm

in the on-state and increase of the breakdown voltage by a factor of 1.5 from 178V to 234V in the off-state are obtained for the presented LDMOS structure when compared with those of the optimized conventional RESURF device.

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