The Distortion Analysis of SOI MOSFET for Mixed

Mode Integrated Circuit Application ZHANG Guo-yan; LIAO Huai-lin; HUANG Ru; Mansun CHAN; ZHANG Xing; WANG Yang-yuan

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The Distortion Analysis of SOI MOSFET for Mixed

更新时间：2025-07-16

- The Distortion Analysis of SOI MOSFET for Mixed
- Acta Electronica Sinica Vol. 30, Issue 2, Pages: 232-235(2002)
- 作者机构：
  
  1. 北京大学微电子学研究所,北京,100871
  2. 香港科技大学电子工程系
  3. 北京大学微电子学研究所北京,100871
  4. 香港科技大学电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN399.1
- Published：2002
- 稿件说明：
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Mode Integrated Circuit Application ZHANG Guo-yan, LIAO Huai-lin, HUANG Ru, et al. The Distortion Analysis of SOI MOSFET for Mixed[J]. Acta Electronica Sinica, 2002, 30(2): 232-235.
DOI：

Mode Integrated Circuit Application ZHANG Guo-yan, LIAO Huai-lin, HUANG Ru, et al. The Distortion Analysis of SOI MOSFET for Mixed[J]. Acta Electronica Sinica, 2002, 30(2): 232-235. DOI：

摘要

本文较为详细地分析了SOI MOSFET的失真行为.利用幂级数方法对不同结构包括部分耗尽PD、全耗尽FD和体接触BC的SOI器件的谐波失真进行了对比性的实验研究.同时

在实验分析的基础上提出了描述失真行为的连续的SOI MOSFET失真模型.该模型通过引入平滑函数和主要的影响失真的物理机制

使得模拟计算结果能够与实验结果较好的吻合.本文所得到的结果可用于低失真的数模混合电路的设计

并对低失真电路的优化提供指导方向.

Abstract

The distortion behavior of Silicon-On-Insulator (SOI) MOSFET is systematically discussed in this paper.With Power series analysis method

the harmonic distortion of different configurations of SOI devices (PD

FD and BC) is experimentally investigated.At the same time

a continuous distortion model for SOI MOSFET is presented by including the main distortion-causing mechanisms and the smoothing function.The accuracy of this model has been verified by reproducing the experimental data.The results can be used to evaluate the distortion behavior of mixed mode integrated circuit and serve as a guideline for the optimization of low distortion application.

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