The paper gives the equivalent circuit of a high voltage LDMOS at very high temperatures

and analyzes performance of leakage current and intrinsic parameters of a LDMOS from 25℃ to 300℃.It may be concluded that the maximal applied temperature of a LDMOS is determined by the reverse leakage current of a pn junction across gate and drain

and the relationship between on-resistance and temperature is (

T/T

1

)

Z

(z

is 1.5 to 2.5).