Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

HE Jin; ZHANG Xing; HUANG Ru; WANG Yang-yuan

您当前的位置：

首页 >

文章列表页 >

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

更新时间：2025-07-16

- Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique
- Acta Electronica Sinica Vol. 30, Issue 8, Pages: 1108-1110(2002)
- 作者机构：
  
  1. 北京大学微电子学研究所,北京,100871
  2. 美国加州大学BERKELEY分校EECS系,美国加州,94720
  3. 北京大学微电子学研究所北京,100871
  4. 美国加州大学BERKELEY分校EECS系美国加州,94720
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：2002
- 稿件说明：
移动端阅览
HE Jin, ZHANG Xing, HUANG Ru, et al. Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique[J]. Acta Electronica Sinica, 2002, 30(8): 1108-1110.
DOI：

HE Jin, ZHANG Xing, HUANG Ru, et al. Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique[J]. Acta Electronica Sinica, 2002, 30(8): 1108-1110. DOI：

摘要

本文提出了用线性余因子差分亚阈电压峰测量电应力诱生MOSFET界面陷阱的新技术并进行了实验验证.详细介绍了该方法的基本原理和实验实现

得到了电应力诱生MOSFET界面陷阱和累积应力时间的关系.该方法具有普适性

可用于MOSFET的一般可靠性研究和寿命预测.

Abstract

A new experimental technique namely the linear cofactor difference sub-threshold voltage method is presented in this paper for extraction of the MOSFET interface traps induced by the gate oxide stress test and verified on N-MOSFETs.The basic principle of this technique is introduced and the experimental realization is elucidated in details.It is shown that this method enables reliable extraction of the increased interface traps with a rise of the accumulated gate oxide stress test time to be obtained and that its validity is also verified by the extraction experiments on an n-channel MOSFET device.This method will be a new tool in characterizing and predicting reliability and lifetime of MOFSTs.

关键词

Keywords

references

Views

1015

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated-Diode Technique

Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET

Related Author

HE Jin

ZHANG Xing

HUANG Ru

WANG Yang-yuan

张正选

罗晋生

袁仁峰

何宝平

Related Institution

Institute of Microelectronics of Peking University

西安交通大学微电子所!西安710049

西北核技术研究所,西安710024,西安交通大学微电子所!西安710049,西北核技术研究所!西安710024,西北核技术研究所!西安710024,西北核技术研究所!西安710024,西北核技术研究所!西安710024

⁰