Design and Test of 2-GHz CMOS RF Low Noise Amplifier

LIN Min; WANG Hai-yong; LI Yong-ming; CHEN Hong-yi

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Design and Test of 2-GHz CMOS RF Low Noise Amplifier

更新时间：2025-07-16

- Design and Test of 2-GHz CMOS RF Low Noise Amplifier
- Acta Electronica Sinica Vol. 30, Issue 9, Pages: 1278-1281(2002)
- 作者机构：
  
  清华大学微电子学研究所,北京,100084
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN4
- Published：2002
- 稿件说明：
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LIN Min, WANG Hai-yong, LI Yong-ming, et al. Design and Test of 2-GHz CMOS RF Low Noise Amplifier[J]. Acta Electronica Sinica, 2002, 30(9): 1278-1281.
DOI：

LIN Min, WANG Hai-yong, LI Yong-ming, et al. Design and Test of 2-GHz CMOS RF Low Noise Amplifier[J]. Acta Electronica Sinica, 2002, 30(9): 1278-1281. DOI：

摘要

本文采用CMOS工艺

针对无线通信系统前端(Front-end)的低噪声放大器进行了分析、设计、仿真和测试.测试结果表明

该放大器工作在2.04-GHz的中心频率上

3dB带宽约为110MHz

功率增益为22dB

NF小于3.3dB.测试结果与仿真结果能够很好地吻合.

Abstract

Design and test of a 2-GHz RF low noise amplifier(LNA)implemented with CMOS technology is presented here.Measurement results show this amplifier works well centered at 2.04GHz frequency

with a 22dB forward power gain(S21)and a noise figure(NF) less than 3.3dB.It has a fairly wide 3-dB bandwidth which is 110MHz

suitable for most portable wireless applications.

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