A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region

XU Jian-sheng; ZHOU Qiu-zhan; ZHANG Xin-fa

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A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region

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- A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region
- Acta Electronica Sinica Vol. 30, Issue 8, Pages: 1192-1195(2002)
- 作者机构：
  
  吉林大学通信工程学院测控及通信仪器系,吉林,长春,130025
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722
- Published：2002
- 稿件说明：
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XU Jian-sheng, ZHOU Qiu-zhan, ZHANG Xin-fa. A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region[J]. Acta Electronica Sinica, 2002, 30(8): 1192-1195.
DOI：

XU Jian-sheng, ZHOU Qiu-zhan, ZHANG Xin-fa. A Novel MOSFET 1/f Noise Model Based on Mobility Fluctuation for Linear Region[J]. Acta Electronica Sinica, 2002, 30(8): 1192-1195. DOI：

摘要

统一的1/

噪声模型

例如BSIM3模型

已经在噪声预测与分析中有着广泛的应用

在多数情况下有很好的效果.然而文献[1

]

中基于物理机理分析的研究表明

统一的1/

噪声模型对处于线性区p-MOSFET不能进行正确的描述:当偏置电压

增加时

该模型低估了噪声功率的增加.据此

本文提出了一种基于物理机理的迁移率波动(MF)1/

噪声模型

并给出了新MF模型与统一的1/

噪声模型在线性区的仿真结果.从仿真结果可以看出

新噪声模型更接近于测试的结果.

Abstract

The unified 1/

noise model

such as BSIM3

has been widely used as noise prediction and analysis model

and it works very well in most cases.However

based on physical analysis in [1

]

it is pointed out that the unified 1/

noise model may not be suitable to predict the 1/

noise for p-type MOSFETs in linear regime because it underestimates noise power so much as bias

increases.In this paper

a physically based expression for mobility fluctuation (MF) 1/

noise model is derived and simulation results for the new MF model and unified 1/

noise are presented together in linear region.The results show that the new models are in agreement with the experimental data well.

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Related Institution

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