Modeling and Analysis of Spiral Inductors for Si-Based RF IC's

JIANG Qi-feng; LI Zheng-fan

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Modeling and Analysis of Spiral Inductors for Si-Based RF IC's

更新时间：2025-07-16

- Modeling and Analysis of Spiral Inductors for Si-Based RF IC's
- Acta Electronica Sinica Vol. 30, Issue 8, Pages: 1219-1221(2002)
- 作者机构：
  
  上海交通大学电子工程系,上海,200030
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN454
- Published：2002
- 稿件说明：
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JIANG Qi-feng, LI Zheng-fan. Modeling and Analysis of Spiral Inductors for Si-Based RF IC's[J]. Acta Electronica Sinica, 2002, 30(8): 1219-1221.
DOI：

JIANG Qi-feng, LI Zheng-fan. Modeling and Analysis of Spiral Inductors for Si-Based RF IC's[J]. Acta Electronica Sinica, 2002, 30(8): 1219-1221. DOI：

摘要

对硅衬底RF集成电路中的螺旋电感进行电磁场建模

考虑了衬底损耗效应

并通过电路分析和网络分析技术得到了二端口简化电感模型.该模型在特定的截止频率以下可提供可靠的电路系统仿真.利用该模型分析了硅衬底的损耗对螺旋电感品质因素(

)的影响.

Abstract

Silicon radio-frequency (RF) integrated circuit spiral inductors are modeled and analyzed.The important effects of substrate loss are included in the analysis.Circuit analysis and network analysis techniques are used to extract a two-port compact inductor model

which can be easily used in circuit simulation below certain frequency.The effect of substrate loss upon

-factor is analyzed using this compact model.

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Related Institution

Dept.E.E,Shanghai Jiaotong University

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