A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate <sup>60</sup>Co Gamma Rays

HE Bao-ping; WANG Gui-zhen; ZHOU Hui; LUO Yin-hong; JIANG Jing-he

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A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ⁶⁰Co Gamma Rays

更新时间：2025-07-16

- A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ⁶⁰Co Gamma Rays
- Acta Electronica Sinica Vol. 30, Issue 8, Pages: 1229-1231(2002)
- 作者机构：
  
  西北核技术研究所西安市69信箱六室,陕西,西安,710024
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722
- Published：2002
- 稿件说明：
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HE Bao-ping, WANG Gui-zhen, ZHOU Hui, et al. A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ⁶⁰Co Gamma Rays[J]. Acta Electronica Sinica, 2002, 30(8): 1229-1231.
DOI：

HE Bao-ping, WANG Gui-zhen, ZHOU Hui, et al. A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ⁶⁰Co Gamma Rays[J]. Acta Electronica Sinica, 2002, 30(8): 1229-1231. DOI：

摘要

利用不同剂量率

射线、低能(小于9MeV)质子和1MeV电子对CC4007RH、CC4011、LC54HC04RH NMOSFET进行了辐照实验

结果表明

在＋5V偏置条件下

9MeV以下质子造成的损伤总是小于

而且质子能量越低

损伤越小;对于同等的吸收剂量

1MeV电子和

Co造成的损伤差别不大;在高剂量率γ射线辐射下

氧化物陷阱电荷是导致器件失效的主要原因

在接近空间低剂量率辐射环境下

LC54HC04RH电路失效的主要原因是辐射感生界面态陷阱电荷

而CC4007RH器件则是氧化物陷阱电荷.

Abstract

N-channel MOS transistors from CC4007

CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays

lower energy protons(less then 9MeV)and 1MeV electrons.According to the result

under 5V bias conditions during radiation

the damage for protons below 9MeV was always less then Co-60.The lower the proton energy

the less the damage.Comparison of electrons to Co-60 showed that for equal absorbed doses

the damage produced was almost equivalent.At higher dose rate Co-60 gamma rays radiation environment

the oxide trapped charges by the irradiation was main reason to induce device failure.when approaching the of low dose irradiation environment

interface trapped charges by the irradiation was the main reason to induce the LC54HC04RH failure.The main reason for CC4007 device failure was the oxide trapped charges by the irradiation.

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A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate 60Co Gamma Rays

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A Comparison of Ionizing Radiation Damage in NMOSFET Device from Different Radiation Resources and Different Dose Rate ⁶⁰Co Gamma Rays