A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS

ZHANG Guo-Yan; LIAO Huai-Lin; HUANG Ru; MANSUN Chan; ZHANG Xing; WANG Yang-Yuan

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A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS

更新时间：2025-07-16

- A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS
- Acta Electronica Sinica Vol. 30, Issue 11, Pages: 1601-1604(2002)
- 作者机构：
  
  1. 北京大学微电子所,北京,100871
  2. 香港科技大学电子工程系
  3. 北京大学微电子所北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305
- Published：2002
- 稿件说明：
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ZHANG Guo-Yan, LIAO Huai-Lin, HUANG Ru, et al. A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS[J]. Acta Electronica Sinica, 2002, 30(11): 1601-1604.
DOI：

ZHANG Guo-Yan, LIAO Huai-Lin, HUANG Ru, et al. A Closed-Form High Frequency Noise Model for Short Channel SOI MOSFETS[J]. Acta Electronica Sinica, 2002, 30(11): 1601-1604. DOI：

摘要

提出了一个新的解析的适用于SOI MOSFET's的高频噪声模型.该模型通过耦合能量平衡方程克服了以往噪声模型所具有的缺点

并对短沟SOI器件的噪声给出精确地描述.同时

利用该模型可以容易地计算出相对于最小噪声值处的优化的栅源电压

为低噪声的电路设计提供优化的设计方向.由于该噪声模型的简单性

可以很方便地将模型植入电路模拟器如SPICE中完成电路设计.

Abstract

A closed-form model able to predict high frequency thermal noise of SOI MOSFETS for all channel length down to deep sub-micron in saturation region has been presented. By incorporating the energy balance equation

this model can exactly describe the noise behavior of SOI MOSFET.At the same time

the phenomena that a deep sub-micron MOSFET exhibits a minimum noise value at a certain drain current (Iopt) when working in saturation can be explained very well. This model has been verified by experimental data and can be easily implemented into existing circuit simulators such as SPICE.

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