DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors

WANG Zi-yu

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DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors

更新时间：2025-07-16

- DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors
- Acta Electronica Sinica Vol. 30, Issue 11, Pages: 1701-1703(2002)
- 作者机构：
  
  1. 北京大学电子学系区域光纤通信网与新型光通信系统国家重点实验室,北京,100871
  2. 北京大学电子学系区域光纤通信网与新型光通信系统国家重点实验室北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：2002
- 稿件说明：
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WANG Zi-yu. DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors[J]. Acta Electronica Sinica, 2002, 30(11): 1701-1703.
DOI：

WANG Zi-yu. DC~3 Gb/s LD/EA Drivers Using Discrete Double Polysilicon Bipolar Transistors[J]. Acta Electronica Sinica, 2002, 30(11): 1701-1703. DOI：

摘要

本文介绍了一种新型LD/EA驱动器.该驱动器采用四个塑封NPN多晶硅双极晶体管和一个常规硅双极晶体管作为有源器件

可以在25Ω负载上产生50mA的调制电流用于直接驱动激光器或在50Ω负载上产生2.5V的调制电压用于驱动EA调制器.该驱动器的工作速率为DC至3Gb/s

调制电流和偏置电流调节范围分别为5~50mA

上升、下降时间小于100ps.

Abstract

A novel laser diodes' driver was introduced.Using only 4 discrete NPN double polysilicon bipolar transistors and one conventional silicon bipolar transistor as active devices

the driver can provide 50 mA modulation current to drive laser diodes for a load of 25Ω and can provide 2.5 V modulation voltage to drive EA modulators for a load of 50Ω.The driver has the rise/fall time of less than 100 ps and can be used for bit rate up to 3 Gb/s with the modulation and the bias current of 5~50 mA respectively.

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