With the development of nano-fabrication techniques

nano-structure devices will be the basis of the next generation integrated circuits.We report process of Si quantum wire and dot based on EBL and RIE processes and process of nano-structure metal gate based on EBL

electron beam evaporation and lift-off techniques.Single electron transistors (SETs) on p-type SIMOX substrates were also fabricated based on the processes.Coulomb blockade and single electron tunneling are observed in the SETs.