An RF micromechanical CPW switch on the isolation polysilicon has been developed by using polymide sacrificial layer

and by dielectric isolating technology.The preliminary test results are as follows:the Coff and Con are 0.21pF

6.1pF respectively;the actuated voltage is 22V.The isolation is 35dB in the off state

and insertion loss is 3dB in the on state.The process is compatible with silicon IC

so is the basis of monolithically integrating RF micromechanical switch and IC for high reliability and low volume.