Silica Removal from Purified Water Produced for MOVPE Process

WEN Rui-Mei; XU Zhi-biao; MENG Guang-zhen; WU Jian

您当前的位置：

首页 >

文章列表页 >

Silica Removal from Purified Water Produced for MOVPE Process

更新时间：2025-07-16

- Silica Removal from Purified Water Produced for MOVPE Process
- Acta Electronica Sinica Vol. 31, Issue 5, Pages: 721-723(2003)
- 作者机构：
  
  1. 同济大学,上海,200092
  2. 华南理工大学,广东,广州,510030
  3. 北京格兰特膜分离设备有限公司,北京,100103
  4. 同济大学上海,200092
  5. 华南理工大学广东广州,510030
  6. 北京格兰特膜分离设备有限公司北京,100103
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN405
- Published：2003
- 稿件说明：
移动端阅览
WEN Rui-Mei, XU Zhi-biao, MENG Guang-zhen, et al. Silica Removal from Purified Water Produced for MOVPE Process[J]. Acta Electronica Sinica, 2003, 31(5): 721-723.
DOI：

WEN Rui-Mei, XU Zhi-biao, MENG Guang-zhen, et al. Silica Removal from Purified Water Produced for MOVPE Process[J]. Acta Electronica Sinica, 2003, 31(5): 721-723. DOI：

摘要

本文介绍了硅对砷化镓材料生长及有机金属化合物气相淀积(MOVPE)工艺中的影响和电脱盐(EDI)技术以及用EDI降低高纯水中硅浓度的机理和方法

通过大量实验比较不同制水设备脱硅效果

得出用EDI技术严格控制pH(8~11)时脱硅效果最好

能使高纯水中Si的浓度＜0.5μg/L

满足了MO源生产及MOVPE工艺用水中Si浓度3μg/L的需要.

Abstract

Silica impurity in the high-purity water that is used for MOVPE(Metallorganic Vapor Phase Epitaxy) processes affects the quality of GaAs material dramatically.The principles and methods of EDI(Electrodeionizaion) to remove silica from high-purity water are introduced.Based on comparison of the efficiencies of silicon removal experiment by using various water fabrication equipments

it was determined that in order to obtain the best silicon removal efficiency the pH values should be controlled between 8.5 to 11.The silicon concentration in high-purity water could be decreased to below 0.5μg/L which satisfied the requirement needed for the fabrication of metallorganic sources and MOVPE process.

关键词

Keywords

references

Views

1092

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

A VLSI-Oriented RLS Adaptive Filter Algorithm and Implementation

Related Author

Hu Guorong

侯朝焕

孙允恭

Related Institution

Dept.of Electronic Engineering,Beijing University of Technology,Beijing 100081)Hou Chaohuan

Sun Yonggong

北京理工大学电子工程系中科院声学所

⁰