Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs)

GUO Bao-zeng; SUN Rong-xia; Umberto Ravaioli

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Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs)

更新时间：2025-07-16

- Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs)
- Acta Electronica Sinica Vol. 31, Issue 8, Pages: 1211-1214(2003)
- 作者机构：
  
  1. 河北大学电子信息工程学院,河北,保定,071002
  2. Beckman Institute,University of Illinois at Urbana-Champaign,405 North Mathews Urbana,IL,USA,61801
  3. 河北大学电子信息工程学院河北保定,071002
  4. Beckman InstituteUniversity of Illinois at Urbana-Champaign405 North Mathews UrbanaIL USA,61801
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.2+3
- Published：2003
- 稿件说明：
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GUO Bao-zeng, SUN Rong-xia, Umberto Ravaioli. Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs)[J]. Acta Electronica Sinica, 2003, 31(8): 1211-1214.
DOI：

GUO Bao-zeng, SUN Rong-xia, Umberto Ravaioli. Two Dimensional Full Band,Ensemble Monte Carlo Simulation of Wutzite GaN Static Induction Transistors (SITs)[J]. Acta Electronica Sinica, 2003, 31(8): 1211-1214. DOI：

摘要

报告了用二维全带组合Monte Carlo方法模拟纤锌矿相GaN静电感应晶体管(SITs)交直流特性的结果.SIT的栅极长度为0.13μm

源极和漏极之间距离为0.5μm.模拟得到了SIT的输出特性

跨导和特征频率特性.模拟得到的跨导最大值为140ms/mm(V

=-1.5V)

器件特征频率最大值为123GHz(I

=3.15A/cm).模拟结果表明纤锌矿相GaN SIT具有大功率和高频工作的潜力.

Abstract

We present the calculated results of DC and AC characteristics of wurtzite GaN static induction transistor by two dimensional full band

ensemble Monte Carlo simulations.The gate length of SIT is 0.13 micron and the distance between source and drain is 0.5 micron.We obtained the output characteristics

transconductance and current cutoff frequency characteristics of SIT by the Monte Carlo simulations.The maximum transconductance is 140 mS/mm at a gate-source voltage of -1.5V

and the maximum current cutoff frequency is 123 GHZ at a drain-source current of 3.15A/cm.The calculated results indicates that wurtzite GaN SITs have a potential for applications in high power and high frequency.

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