Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole

LI Zhi-guo; LU Zhen-jun

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Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole

更新时间：2025-07-16

- Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole
- Acta Electronica Sinica Vol. 31, Issue 7, Pages: 1104-1106(2003)
- 作者机构：
  
  北京工业大学电子信息与控制工程学院,北京,100022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN47
- Published：2003
- 稿件说明：
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LI Zhi-guo, LU Zhen-jun. Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole[J]. Acta Electronica Sinica, 2003, 31(7): 1104-1106.
DOI：

LI Zhi-guo, LU Zhen-jun. Numerical Simulation of Electric and Thermal Characteristic in ULSI Copper-Filled Inteconnect Via Hole[J]. Acta Electronica Sinica, 2003, 31(7): 1104-1106. DOI：

摘要

利用三维有限元模型对Cu互连线通孔进行了电流密度、温度和温度梯度的分布进行了模拟

比较了具有不同阻挡层材料的通孔内的电流密度、温度和温度梯度的分布.对于同一阻挡层材料

进行了不同通孔倾斜角的模拟.模拟结果指出

通过优化通孔倾斜角和优选阻挡层材料可有效地改善通孔内的电流密度和温度的分布

提高ULSI通孔互连的可靠性

这对通孔的设计提供了有益的参考.

Abstract

Three-dimension finite element modeling has been used to simulate and compare the current density

temperature and the gradients of distribution in Copper-filled via hole structure.To the same barrier material

the via hole with different slope has been simulated.The result of the simulation shows that optimizing the slope of the via hole and selecting the barrier material will improved the interconnect reliabiling.All these provide valuable reference to the design of the via hole.

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