Research on Poly-Silicon Integrated Pressure Sensor for High Temperature

ZHANG Wei; WANG Yang-yuan

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Research on Poly-Silicon Integrated Pressure Sensor for High Temperature

更新时间：2025-07-16

- Research on Poly-Silicon Integrated Pressure Sensor for High Temperature
- Acta Electronica Sinica Vol. 31, Issue 11, Pages: 1736-1738(2003)
- 作者机构：
  
  北京大学微电子学研究院,北京,100871
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN4
- Published：2003
- 稿件说明：
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ZHANG Wei, WANG Yang-yuan. Research on Poly-Silicon Integrated Pressure Sensor for High Temperature[J]. Acta Electronica Sinica, 2003, 31(11): 1736-1738.
DOI：

ZHANG Wei, WANG Yang-yuan. Research on Poly-Silicon Integrated Pressure Sensor for High Temperature[J]. Acta Electronica Sinica, 2003, 31(11): 1736-1738. DOI：

摘要

高温压力传感器因其特殊的应用环境而日益受到人们的重视.一些特殊的材料如SiC 、SOI等可以用来制作高温压力传感器

但是由于成本较高或加工难度大等原因

尚未得到广泛应用.本文提出了一种新型的高温压力传感器

采用多晶硅作为压敏电阻

同时采用新的工艺措施与全耗尽CMOS放大电路集成在一起

将输出电压转换为0~+5V的输出信号.通过模拟与投片实验

得到了优化的多晶硅注入浓度

从而使其压阻温度系数在-40℃~180℃范围内接近于零.

Abstract

Pressure sensor for high temperature is very useful for various area applications.Some special materials such as SIC

SOI can be used to manufacture high temperature pressure sensor

but due to the difficult process or/and cost

they are not used widely.In this paper

a novel poly-silicon pressure sensor is designed

further more a CMOS fully depleted integrated circuit is used to change output signal into 0~+5V industrial signal.After simulation and process experiments

the optimized condition of poly-silicon diffusion concentration was found

and the temperature coefficient is reduced to nearly zero between -40℃~180℃.

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