Fabrication and Properties of ZnO Photoconductive UV Detector

YE Zhi-zhen; ZHANG Yin-zhu; CHEN Han-hong; HE Le-nian; ZOU Lu; HUANG Jing-yun; LU Jian-guo

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Fabrication and Properties of ZnO Photoconductive UV Detector

更新时间：2025-07-16

- Fabrication and Properties of ZnO Photoconductive UV Detector
- Acta Electronica Sinica Vol. 31, Issue 11, Pages: 1605-1607(2003)
- 作者机构：
  
  1. 浙江大学硅材料国家重点实验室,浙江,杭州,310027
  2. 浙江大学电机系,浙江,杭州,310027
  3. 浙江大学硅材料国家重点实验室浙江杭州,310027
  4. 浙江大学电机系浙江杭州,310027
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN957.52
- Published：2003
- 稿件说明：
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YE Zhi-zhen, ZHANG Yin-zhu, CHEN Han-hong, et al. Fabrication and Properties of ZnO Photoconductive UV Detector[J]. Acta Electronica Sinica, 2003, 31(11): 1605-1607.
DOI：

YE Zhi-zhen, ZHANG Yin-zhu, CHEN Han-hong, et al. Fabrication and Properties of ZnO Photoconductive UV Detector[J]. Acta Electronica Sinica, 2003, 31(11): 1605-1607. DOI：

摘要

以Si(111)衬底

用脉冲激光沉积(PLD)法制得C轴高度择优取向的ZnO薄膜

并利用剥离技术制备了ZnO光导型紫外探测器.Al叉指状电极是由平面磁控溅射技术沉积得到的.对Al/ZnO/Al的伏安特性和紫外光响应的研究表明

金属铝和ZnO能形成很好的欧姆接触

紫外探测器的电阻值在100KΩ左右.在紫外区域

其5V偏压下的光响应度为0.5A/W.

Abstract

Highly c-axis oriented ZnO thin films were deposited on single crystal Si(111)substrates by pulsed laser deposition(PLD).The photoconductive UV detectors based on ZnO thin films

being an MSM structure with interdigital(IDT)configuration

were fabricated by the desquamation photoetching method.The Al film-electrodes were deposited by planar magnetron sputtering.Results showed that the alloying temperature should be lower than 600℃.The I-V characteristic and the UV photoresponsivity of the detector were also investigated

indicating a good ohmic behavior between Al and ZnO thin film

a resistance about 100KΩ for the detector

and a photoresponsivity of 0.5A/W under ultraviolet illumination in ultraviolet region.

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