Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIM<sup>TM</sup>

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Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIM^TM

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- Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIM^TM
- Acta Electronica Sinica Vol. 32, Issue 5, Pages: 841-844(2004)
- 作者机构：
  
  1. 南京师范大学电气与电子工程学院,江苏,南京,210042
  2. 美国爱达荷州Boise州立大学电气与计算机系,ID83706,USA
  3. 南京师范大学电气与电子工程学院江苏南京,210042
  4. 美国爱达荷州Boise州立大学电气与计算机系06USA,ID837
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722
- Published：2004
- 稿件说明：
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ZHAO Yang, PARKE Stephen, BURKE Franklyn. Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIM^TM[J]. Acta Electronica Sinica, 2004, 32(5): 841-844.
DOI：

ZHAO Yang, PARKE Stephen, BURKE Franklyn. Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIM^TM[J]. Acta Electronica Sinica, 2004, 32(5): 841-844. DOI：

本文基于BSIM标准研究了现代深亚微米级MOSFET器件的建模和特征提取方法

着重在于短沟道效应方面

其中测试样品由Micron

公司提供

最短沟道长度仅为0.16微米.内容包括一般短沟道效应、基板效应和漏极感应势垒降低效应(简称DIBL效应)等.研究表明

实验数据和BSIM模型结果较好吻合

证明文中方法的有效性以及较好的应用前景.

In this paper the methodology of modeling and characterization of modern MOSFET

with emphasis on short-channel effects of deep-submicorns devices up to 0.16 um

is researched based on BSIM.The threshold voltage model of Micron

bulk device is made to demostrate the processing of modeling and characterization.The results of device model

cosisting of normal short-channel effect

body effect and DIBL (drain induced barrier lowering) effect

show good agreement between BSIM model and experimental data which proves effectiveness and good potential of the methodology.

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Modeling and Characterization of Deep-Submicron MOSFET with Short-Channel Effect Based on BSIMTM