LIU Dong-feng, QIN Jia-yin. Monte Carlo Simulation of THz-Pulse Generation from Semiconductor Surface[J]. Acta Electronica Sinica, 2004, 32(8): 1314-1317.
DOI:
LIU Dong-feng, QIN Jia-yin. Monte Carlo Simulation of THz-Pulse Generation from Semiconductor Surface[J]. Acta Electronica Sinica, 2004, 32(8): 1314-1317.DOI:
Monte Carlo Simulation of THz-Pulse Generation from Semiconductor Surface
which is developed with the object-oriented programming language C++ and unified modeling language UML
has been introduced in this paper.Using this simulator
we have simulated the local fields on the GaAs surfaces and the temporal waveforms of THz pulses when the GaAs surface is illuminated by intense sub-picosecond optical pulses (the corresponding photogenerated carrier density 10
19
cm
-3
)and biased in a high applied external electrical field (100kV/cm).The power spectra show that the higher bias electric field may generate the higher power output within the range of 6THz
and beyond this range the effect of high bias fields is not obvious.