Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches

SHI Wei; JI Wei-li; ZHAO Wei

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Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches

更新时间：2025-07-16

- Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches
- Acta Electronica Sinica Vol. 32, Issue 11, Pages: 1891-1893(2004)
- 作者机构：
  
  1. 西安理工大学应用物理系,陕西,西安,710048
  2. 中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室,陕西,西安,710068
  3. 西安理工大学应用物理系陕西西安,710048
  4. 中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室陕西西安,710068
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN957
- Published：2004
- 稿件说明：
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SHI Wei, JI Wei-li, ZHAO Wei. Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches[J]. Acta Electronica Sinica, 2004, 32(11): 1891-1893.
DOI：

SHI Wei, JI Wei-li, ZHAO Wei. Investigation of Ultra-Wideband Microwave Generation Based on Photoconductive Semiconductor Switches[J]. Acta Electronica Sinica, 2004, 32(11): 1891-1893. DOI：

摘要

用全固态绝缘结构的横向型半绝缘GaAs光电导开关

在高重复频率飞秒激光脉冲触发下产生超快电脉冲串

经过微带同轴过渡连接至宽带微波天线进行了超宽带电磁辐射和接收的实验

测试了辐射波形及频谱分布

得到了上升时间为200ps、脉宽500ps、重复频率82MHz、辐射频带宽度达6.0GHz以上的电磁波

分析了用光电导开关进行宽带辐射的机理和特性.

Abstract

The experimental results of wideband antenna radiating and receiving ultra fast electrical pulse that was generated by GaAs photoconductive switch triggered by femo-second laser pulse is reported.From receiving antenna

ultra fast electrical pulse of 200 ps rise time and 500 ps pulse width was obtained

the repetition rate of the pulse was about 82 MHz and frequency bandwidth was more than 6.0 GHz.

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Related Institution

Institute of Electronics,Academica Sinica.

中国科学院电子学研究所北京 100080

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