The Removal of Silicon and Boron in Ultra-Pure Water for Semiconductor Processes

WEN Rui-mei; DENG Shou-quan; ZHANG Ya-feng; GE Wei-wei

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The Removal of Silicon and Boron in Ultra-Pure Water for Semiconductor Processes

更新时间：2025-07-16

- The Removal of Silicon and Boron in Ultra-Pure Water for Semiconductor Processes
- Acta Electronica Sinica Vol. 33, Issue 2, Pages: 197-199(2005)
- 作者机构：
  
  上海同济大学电子信息工程学院,上海,200092
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304.052
- Published：2005
- 稿件说明：
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WEN Rui-mei, DENG Shou-quan, ZHANG Ya-feng, et al. The Removal of Silicon and Boron in Ultra-Pure Water for Semiconductor Processes[J]. Acta Electronica Sinica, 2005, 33(2): 197-199.
DOI：

WEN Rui-mei, DENG Shou-quan, ZHANG Ya-feng, et al. The Removal of Silicon and Boron in Ultra-Pure Water for Semiconductor Processes[J]. Acta Electronica Sinica, 2005, 33(2): 197-199. DOI：

摘要

本文主要研究了EDI(Electrodeionization)对高纯水中硅、硼的脱除方法.通过对电压、进水电导率(淡室、浓室)、流量(淡室、浓室、极室)、pH值等因素的研究

得出EDI最佳脱硅、硼条件.EDI进水SiO

浓度为1000μg/L

最佳出水硅为2.66μg/L

为目前国内最好水平.EDI进水硼浓度为50μg/L

最佳出水中硼含量为＜1μg/L.满足了大规模集成电路用水中硅、硼的要求(对于兆位电路硅要求＜3μg/L

硼要求＜1μg/L).

Abstract

The method of the removal of silicon and boron in ultra-pure water by EDI is investigated in this paper.With the investigation of voltage

conductivity of feed water in dilute and concentrate chambers

flux of feed water in dilute

concentrate and electrodal chambers

and pH value

the optimal conditions of silicon and boron removal are obtained.When the silica in feed water is 1000μg/L

the silicon in products can be decreased to 2.66μg/L

which is the best result in our country at present.And with 50μg/L boron in feed water

less than 1μg/L boron in products can be obtained.All these results meet the requirements for ULSI (Silicon:＜3μg/L

Boron:＜1μg/L).

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