Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures

ZHANG Xiao-dan; ZHAO Ying; GAO Yan-tao; ZHU Feng; WEI Chang-chun; SUN Jian; GENG Xin-hua; XIONG Shao-zhen

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Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures

更新时间：2025-07-16

- Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures
- Acta Electronica Sinica Vol. 33, Issue 5, Pages: 920-922(2005)
- 作者机构：
  
  1. 南开大学光电子薄膜器件与技术研究所,天津,300071
  2. 南开大学光电子薄膜器件与技术天津市重点实验室,天津,300071
  3. 南开大学光电信息技术科学教育部重点实验室,天津,300071
- 作者简介：
- 基金信息：
- DOI：
  CLC： TK514
- Published：2005
- 稿件说明：
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ZHANG Xiao-dan, ZHAO Ying, GAO Yan-tao, et al. Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures[J]. Acta Electronica Sinica, 2005, 33(5): 920-922.
DOI：

ZHANG Xiao-dan, ZHAO Ying, GAO Yan-tao, et al. Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures[J]. Acta Electronica Sinica, 2005, 33(5): 920-922. DOI：

摘要

采用微区拉曼散射、傅立叶变换红外吸收和光热偏转谱对VHF-PECVD制备的不同衬底温度硅薄膜进行了微结构分析.结果表明:随衬底温度的升高

薄膜逐渐由非晶向微晶过渡

晶化率(

)逐渐增大

样品中的氢含量逐渐降低.在200~250℃条件下制备的微晶硅薄膜具有低的缺陷密度.通过优化工艺条件制备出了效率达7.1%的单结微晶硅太阳电池

电池厚度仅为1.2μm

且没有ZnO背反射电极.

Abstract

A series of microcrystalline silicon thin films prepared at different substrate temperature (Ts) by very high frequency plasma enhanced chemical vapor deposition were analyzed by Micro-Raman spectroscopy

Fourier transform infrared spectroscopy and photo thermal deflection spectroscopy.The results showed that structure of sample evaluated from amorphous to microcrystalline and hydrogen content decreased with the increase of Ts.Microcrystaline silicon thin films prepared between 200℃ and 250℃ indicated low defect density.Microcrystalline silicon solar cells with convertion efficiency 7.1% was fabricated by VHF-PECVD.There was no Z

O back reflector and thickness of solar cell was only 1.2μm.

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