Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science &amp; Technology,Clear Water Bay,Kowloon,Hong Kong,China)

WU Chun-ya; MENG Zhi-guo; LI Juan; MA Hai-ying; ZHAO Shu-yun; LIU Jian-ping; XIONG Shao-zhen; KWOK Hoi-sing; Wong Man

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Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)

更新时间：2025-07-16

- Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)
- Acta Electronica Sinica Vol. 33, Issue 8, Pages: 1349-1352(2005)
- 作者机构：
  
  1. 南开大学信息学院光电子薄膜器件与技术研究所,光电子薄膜器件与技术天津市重点实验室,光电信息技术科学教育部重点实验室(南开大学,天津大学),天津,300071
  2. 香港科技大学电机电子工程系,香港九龙清水湾
  3. 南开大学信息学院光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室(南开大学天津大学)天津,300071
  4. 香港科技大学电机电子工程系香港九龙清水湾
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN325
- Published：2005
- 稿件说明：
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WU Chun-ya, MENG Zhi-guo, LI Juan, et al. Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)[J]. Acta Electronica Sinica, 2005, 33(8): 1349-1352.
DOI：

WU Chun-ya, MENG Zhi-guo, LI Juan, et al. Display Driving Circuits Made with MIUC Poly-Si TFTs on Glass Substrate ( 1.Institute of Photo-Electronics,School of Information Technology,Nankai University, The Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology Key Laboratory of Opto-Electronic Information Science and Technology ,Ministry of Education,Tianjin 300071,China; 2.Department of Electrical and Electronic Engineering,The Hong Kong University of Science & Technology,Clear Water Bay,Kowloon,Hong Kong,China)[J]. Acta Electronica Sinica, 2005, 33(8): 1349-1352. DOI：

摘要

以高性能的金属诱导单一方向横向晶化多晶硅薄膜晶体管(MIUC poly-Si TFT)为基础

研制出性能能满足AM-LCD和AM-OLED要求、版图和象素尺寸适配、制备工艺和象素电路兼容的多晶硅TFT行扫描和列驱动电路.该行扫描电路工作电压为3.5-10V;当工作电压为5V、负载电容为22pf时

下降沿约为150ns

上升沿约为205ns

最高工作频率在1MHz以上;列驱动电路工作电压为3.5-8V;当工作电压为5V、负载电容为22pf时

上升沿约为200ns

信号衰减率为15％(64μs扫描周期)

最高工作频率达到4MHz.将该MIUC poly-Si TFT多晶硅行扫描、列驱动电路和有源选址电路集成到同一基板上

制备出象素数为80×RGB×60、动态显示效果良好的全集成型LCD屏样品.

Abstract

Based on metal induced unilateral crystallization (MIUC) technology

poly-Si thin film transistor (poly-Si TFT) display scan driving circuit and data driving circuit for AM-LCD and AM-OLED were developed

which can be made with the fabrication processes compactable with poly-Si TFT active matrix.The scan driver can work within the driving voltage from 3.5V through 10V.When it works at the driving voltage of 5V and the loading capacity of 22pf

the fall time and the rise time of the scanning circuit is about 150ns and 205ns respectively

the maximum working frequency is higher than 1MHz.Meanwhile

the data driving circuit can work within the voltage from 3.5V through 8V.Its rise time is about 200ns

its signal degradation ratio is about 15% during a period of 64μs

and the corresponding maximum working frequency is about 4MHz

when the data driving circuit work at the biased voltage of 5V and the loading capacity of 22pf.Using those MIUC poly-Si TFT display drivers

a self scanned active matrix LCD with pixel number of 80×RGB×60 was demonstrated.

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