It was recalled to the experimental results about TCR for monocrystal silicon as well as diffused silicon

and confirmed that the TCR curves for monocrystal silicon published in ASTM is complete and definite.They can be expressed as polynomials with five orders by using the normalized match

developed by us.After they were reserved in computer of the automatic measurement system with the four-point probe positioning function

relying on the graphic recognition

the profile of resistivity

reduced to that of 23℃

in the cross-section of slices can be immediately obtained.The principle of this normalized matching method and the obtained results of TCR for crystal silicon are presented in this paper.